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相关概念视频

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Atomic Nuclei: Nuclear Spin State Population Distribution01:14

Atomic Nuclei: Nuclear Spin State Population Distribution

Near absolute zero temperatures, in the presence of a magnetic field, the majority of nuclei prefer the lower energy spin-up state to the higher energy spin-down state. As temperatures increase, the energy from thermal collisions distributes the spins more equally between the two states. The Boltzmann distribution equation gives the ratio of the number of spins predicted in the spin −½ (N−) and spin +½ (N+) states.
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Electrochemical Systems01:24

Electrochemical Systems

Electrochemical systems provide a fascinating insight into the dynamic interplay of charged species within various phases. One notable example is the interaction between a membrane permeable to K⁺ ions but not to Cl⁻ ions, separating an aqueous KCl solution from pure water. As K⁺ ions diffuse through the membrane, they generate net charges on each phase, leading to a potential difference between them.Similarly, when a piece of Zn is immersed in an aqueous ZnSO₄ solution, the Zn metal, composed...
Electric Field of Two Equal and Opposite Charges01:30

Electric Field of Two Equal and Opposite Charges

Atoms generally contain the same number of positively and negatively charged particles, protons, and electrons. Hence, they are electrically neutral. However, the centers of the positive and negative charges do not always coincide. In such a scenario, the electric field of an atom may not be zero.
A separation of the positive and negative charges can lead to a weak, remnant effect of the positive and negative charges. The expectation is that the more the distance between the positive and...
Atomic Radii and Effective Nuclear Charge03:08

Atomic Radii and Effective Nuclear Charge

The elements in groups of the periodic table exhibit similar chemical behavior. This similarity occurs because the members of a group have the same number and distribution of electrons in their valence shells.

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相关实验视频

Updated: Jul 12, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

原子尺度上的负差电阻:对原子尺度设备的含义

I W Lyo, P Avouris

    Science (New York, N.Y.)
    |September 22, 1989
    PubMed
    概括

    负差电阻 (NDR) 能够快速切换电子设备. 研究人员在原子尺度上的暴露表面上观察了NDR,这是通过局部状态道的结果.

    科学领域:

    • 材料科学 材料科学 材料科学
    • 表面科学是一门学科.
    • 凝聚物质物理学 凝聚物质物理学

    背景情况:

    • 负差电阻 (NDR) 对高速电子设备至关重要.
    • 了解纳米级的NDR是推动半导体技术发展的关键.

    研究的目的:

    • 在暴露于的表面上,研究原子水平上的NDR的起源.
    • 为了证明在原子尺度上实现设备特征的可行性.

    主要方法:

    • 使用扫描道显微镜 (STM) 进行原子尺度成像.
    • 使用扫描道光谱 (STS) 来分析电流电压特征.

    主要成果:

    • 在二极管配置中观察到NDR,使用STM尖端在暴露表面的特定位置上.
    • 已确定NDR活性部位的原子尺寸 (约为1纳米).
    • 归因于NDR通过局部化,类似原子的状态进行量子道.

    结论:

    • 在特定的半导体表面上,可以在原子尺度上实现NDR.
    • 局部电子状态对这种规模的NDR现象负责.
    • 原子尺度的NDR为新的纳米电子设备开辟了可能性.

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    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

    Published on: June 26, 2015

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    Last Updated: Jul 12, 2026

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
    05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
    09:26

    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

    Published on: June 26, 2015