相关实验视频
Updated: Jul 11, 2026

09:51
Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
Published on: April 22, 2013
通过三维原子探头断层扫描对缺陷周围的Cottrell大气层进行成像
Keith Thompson1, Philip L Flaitz, Paul Ronsheim
1Imago Scientific Instruments Corporation, 5500 Nobel Drive, Madison, WI 53711, USA. kthompson@imago.com
概括
在离子植入和回火后,原子的科特雷尔大气层在缺陷周围形成. 这些杂质原子集群持续存在,可能会限制纳米器件的可扩展性,因为剂的波动.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术 纳米技术
背景情况:
- 精确控制剂原子对于纳米设备的电性和制造是必不可少的.
- 在离子植入过程中引入的缺陷会导致剂分布不均,阻碍设备的性能.
研究的目的:
- 调查中缺陷周围的科特雷尔大气层的形成和持久性.
- 了解这些大气层对剂分布和设备可扩展性的影响.
主要方法:
- 利用原子探头断层扫描来识别和定位中缺陷附近的原子.
- 在离子植入和化后分析样本,观察剂的行为.
主要成果:
- 证实了在植入和回火后的缺陷周围由原子组成的科特雷尔大气层的形成.
- 观察到,即使经过广泛的热处理,这些气氛仍然与脱位环有关.
结论:
- 原子的科特雷尔大气层是影响中剂均性的重要因素.
- 这些持久的杂质原子集群对基于的纳米设备的可扩展性构成挑战.
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