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Updated: Jul 11, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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在单晶中,裂增长缓慢

J A Connally, S B Brown

    Science (New York, N.Y.)
    |June 12, 1992
    PubMed
    概括

    测量了微器件的时间依赖的裂纹生长. 层的静态疲劳导致裂的缓慢生长,影响设备的可靠性和微机械设备的应用.

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