相关实验视频

Updated: Jul 11, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

基于解决方案的增长和结构性特征的同型和异型分支半导体纳米线的半导体纳米线

Angang Dong1, Rui Tang, William E Buhro

  • 1Department of Chemistry and Center for Materials Innovation, Washington University, St. Louis, Missouri 63130-4899, USA.

Journal of the American Chemical Society
|September 21, 2007
PubMed
概括

用顺序播种和溶液-液体-固体 (SLS) 方法合成了体同分支和异分支纳米线 (NW). 这种方法可以控制分支半导体纳米结构的增长,用于先进的电子和光子应用.

更多相关视频

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Synthesis of Substrate-Bound Au Nanowires Via an Active Surface Growth Mechanism09:36

Synthesis of Substrate-Bound Au Nanowires Via an Active Surface Growth Mechanism

Published on: July 18, 2018

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...