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Updated: Jul 11, 2026

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping
09:32

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Published on: July 2, 2012

高面比的线阵列是光电化学细胞.

James R Maiolo1, Brendan M Kayes, Michael A Filler

  • 1Kavli Nanoscience Institute and Beckman Institute, 1200 East California Boulevard, California Institute of Technology, Pasadena, California 91125, USA.

Journal of the American Chemical Society
|September 26, 2007
PubMed
概括

No abstract available in PubMed .

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...