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观测铜在双重修改的粒边界的原子扩散
Kuan-Chia Chen1, Wen-Wei Wu, Chien-Neng Liao
1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China.
Science (New York, N.Y.)
|August 23, 2008
概括
在铜粒中引入纳米级双胞胎缺陷显著改变了粒边界结构和原子扩散. 这些缺陷使电迁移速度减慢了十倍,为物质财产控制提供了新的途径.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术 纳米技术
背景情况:
- 粒度边界对多晶体固体的机械和电气性质具有重要影响.
- 沿粒边界的原子和电子迁移是材料性能的关键因素.
研究的目的:
- 调查纳米级双胞胎缺陷对粒度边界结构和铜中的原子扩散的影响.
- 在修改的谷物边界中分析电迁移的行为.
主要方法:
- 在位超高真空传输电子显微镜 (UHV-TEM).
- 高分辨率传输电子显微镜 (HRTEM).
- 观察电迁移引起的原子扩散.
主要成果:
- 双胞胎缺陷被成功地引入铜粒,修改了粒边界结构.
- 沿着双重修饰的谷物边界观察到电迁移诱导的原子扩散.
- 由双胞胎和粒度边界形成的三点减少了粒度边界和表面电迁移的一个数量级.
结论:
- 纳米尺度的双胞胎缺陷改变了颗粒边界特征和原子运输.
- 由于核化化时间,三点作为电迁移的障碍.
- 这一发现为控制多晶固体中的原子运输和材料特性提供了洞察力.
相关概念视频
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