电光子晶体太赫兹激光器,由边界条件控制
Y Chassagneux1, R Colombelli, W Maineult
1Institut d'Electronique Fondamentale, Université Paris Sud and CNRS, UMR 8622, 91405 Orsay, France.
Nature
|January 9, 2009
概括
电光子晶体激光器现在可以使用新的边界条件来控制. 这种技术使得可调节模式激发和提升了半导体激光器的方向性.
科学领域:
- 光学和光子学 在光学和光子学.
- 半导体物理 半导体物理
- 特拉赫兹技术的技术.
背景情况:
- 光子晶体激光器通常使用光学,限制了实际应用.
- 电气抽水更有吸引力,但面临着当前扩散和边界条件的挑战.
- 远红外激光器需要很大的设备厚度,加剧了边界效应问题.
研究的目的:
- 为了研究突如其来的边界条件对电光子晶体激光器的影响.
- 开发一种通用技术来实现反射或吸收边界.
- 为了在太赫兹 (THz) 半导体激光器中展示更好的性能.
主要方法:
- 制造具有图案顶部金属化的光子晶体激光器.
- 实施一种一般技术来控制设备边界 (反射/吸收).
- 激光操作和发射特性的表征.
主要成果:
- 在电光子晶体激光器中证明了对边界条件的控制.
- 实现了耳语画廊式模式或真实光子晶体状态的激发.
- 制造的THz半导体激光器在2.552.88 THz范围内运行,具有单模作用.
结论:
- 突发的边界条件显著影响电光子晶体激光器操作.
- 开发的技术允许选择可调节模式和增强方向性.
- 这项工作为传统的THz半导体激光器的方向性差提供了解决方案.
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