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巨型道电阻对于铁电状态的非破坏性读取

V Garcia¹, S Fusil, K Bouzehouane

¹Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau, France.

|June 2, 2009

概括

研究人员在酸薄膜中展示了强大的铁电力到1纳米,使高级非挥发性内存应用程序的非破坏性电阻读取成为可能.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

铁电膜用于非挥发性内存,但具有破坏性读取.
实现稳定的铁电和在纳米尺寸厚度上的切换是具有挑战性的.

研究的目的:

为了在超薄膜中证明强大的铁电性,用于非破坏性电阻读取.
探索高密度铁电式存储器设备的潜力.

主要方法:

在室温下采用Piez应答力显微镜来评估铁电.
导电尖原子力显微镜以证明电阻读数.
制造高应变的酸薄膜.

主要成果:

在酸铁薄膜中观察到强的铁电力低至1nm.
通过道电流证明了极化状态的非破坏性电阻读取.
观察到电阻效应随着厚度呈指数变大,在3nm时达到75,000%.
已证明可扩展到70nm,表明潜在密度超过16Gbit英寸.

结论:

超薄的铁电薄膜能够实现非破坏性的电阻读出记忆.
在铁电屏障中利用量子道是纳米级记忆的关键.
结果为简化,更高密度和更快的铁电记忆铺平了道路.

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