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相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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低温溶液处理的无形氧化和氧化物场效应晶体管.

Hyun Sung Kim1, Myung-Gil Kim, Young-Geun Ha

  • 1Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.

Journal of the American Chemical Society
|July 17, 2009
PubMed
概括
此摘要是机器生成的。

使用旋转涂层方法制造的无形氧化 (ITO) 薄膜晶体管 (TFT) 实现了出色的电气性能. 这些低温加工的ITO TFT显示了灵活电子应用的有希望的结果.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 纳米技术 纳米技术

背景情况:

  • 无形氧化 (ITO) 是透明导电膜的关键材料.
  • 薄膜晶体管 (TFT) 是电子显示器和电路中必不可少的组件.
  • 开发用于ITO TFT的低温制造方法对于灵活的电子产品至关重要.

研究的目的:

  • 用一种新型的旋转涂层前体溶液制造基于ITO的无形TFT.
  • 研究不同介电材料 (SiO2和SANDs) 对设备性能的影响.
  • 为了优化高性能 ITO TFT 与低温处理兼容的回火温度.

主要方法:

  • 一种含有InCl3和SnCl4的ITO前体溶液在SiO2和自组装纳米电解质 (SAND) 上的螺旋涂层.
  • 在低于或等于250°C的温度下制造的薄膜的化.
  • 由此产生的无形 ITO TFT 的电气特性.

主要成果:

  • 在低回火温度 (≤250°C) 制造的无形 ITO TFT 实现了优良的电气特性.
  • 对于[In3+]/[In3+ + Sn4+]的摩尔比为0.7的优化设备,在250°C时火,产生了~2cm2/Vs (SiO2) 和~10-20cm2/Vs (SANDs) 的电子流动性.
  • 在220°C处理的ITO TFT显示电子流动性超过0.2cm2/Vs,表明塑料基板应用的潜力.

结论:

  • 无形ITO TFT可以通过低温旋转涂层工艺成功制造.
  • 自组装的纳米电介质 (SAND) 与无形的ITO TFT相比,在SiO2方面提供了更高的性能.
  • 开发的制造方法对生产基于ITO的灵活电子设备非常令人鼓舞.