在金属-SAM-金属氧化物-金属连接处的分子整顿
Christian A Nijhuis1, William F Reus, George M Whitesides
1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
Journal of the American Chemical Society
|November 26, 2009
概括
用铁素终结的自组装单层 (SAM) 在道连接处表现出显著的电流纠正. 这项研究证明了它们在电子应用中的潜力,超越了没有铁素的SAM.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 电化学 电化学 电化学
背景情况:
- 自组装单层 (SAM) 对于分子电子学至关重要.
- 铁素 (Fc) 是一种具有电子应用潜力的氧化还原活性分子.
- 在分子结点中有效的电荷传输和整形是关键的研究领域.
研究的目的:
- 为了比较 ferrocene-terminated SAMs (SC(11) Fc) 与非 ferrocene-terminated SAMs (SC(n-1) CH(3) 的电荷传输和整顿特性.
- 建立一种高产率的方法,用于制造稳定的基于SAM的道结.
- 以统计分析整顿行为,以获得物理-有机洞察力.
主要方法:
- 在模板脱落的银 (Ag (TS)) 表面上制造SC ((11) Fc和SC ((n-1) CH ((3) 的SAM.
- 使用和 (EGaIn) 带有本地氧化物皮肤的性合金,形成软电接触.
- 测量电流密度 (J) 与应用电压 (V),以确定校正比率 (R).
- 对大量数据点 (N = 300-1000) 的统计分析.
主要成果:
- SC(11)Fc SAMs形成了稳定的道交叉点,产量高 (70-90%).
- SC(11) Fc连接处表现出显著的电流纠正,R ≈ 1.0 x 10^2.
- 与SC(n-1) CH(3) SAMs的控制结点显示出最小的纠正 (R ≈ 1.5-2.1).
- 统计分析证实了Fc含有的连接处的整正的重要性.
结论:
- 在SAM中,铁头组对于实现显著的电流纠正至关重要.
- EGaIn接触方法为基于SAM的分子电子提供了一个高产量,稳定的平台.
- 这些发现支持在分子电子设备和物理有机研究中使用Fc功能化的SAMS.
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