在电沉积磁铁超级网中进行电阻切换
Jay A Switzer1, Rakesh V Gudavarthy, Elizabeth A Kulp
1Department of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, Missouri 65409-1170, USA. jswitzer@mst.edu
Journal of the American Chemical Society
|January 9, 2010
概括
长轴磁铁超级网被电沉积,显示了电阻切换. 这些材料显示出制造电阻随机访问存储器 (RRAM) 设备的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术纳米技术
背景情况:
- 超级网格提供可调节的电子特性.
- 基于磁铁的材料对内存应用具有前景.
研究的目的:
- 对于电子沉积缺陷化学和组合磁铁超级网.
- 调查它们对电阻随机访问存储器 (RRAM) 的潜力.
主要方法:
- 磁铁/铁酸盐超级格子的长轴电极沉积到Au上
- 使用带有脉冲潜力的电化学/化学 (EC) 沉积.
- 缺陷化学和组成超级格子的表征.
主要成果:
- 成功制造了表轴缺陷化学和组成超级.
- 缺陷化学超级网格展示了可逆的低至高和高至低电阻切换.
结论:
- 电是一个可行的方法,用于创建功能性磁铁超级网格.
- 观察到的电阻切换对RRAM设备制造有希望.
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