100GHz晶体管来自晶圆尺度的表轴形石墨烯晶体管
Y-M Lin1, C Dimitrakopoulos, K A Jenkins
1IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com
概括
长轴石墨烯场效应晶体管可以实现100千兆赫的切断频率. 这些高频石墨烯晶体管的性能优于具有类似门长度的晶体管.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 石墨烯的特殊载体移动性是高频电子的关键.
- 场效应晶体管 (FET) 是高频应用中的关键组件.
研究的目的:
- 为了研究使用表轴石墨烯制造的晶体管的高频性能.
- 将这些石墨烯晶体管的性能与最先进的晶体管进行比较.
主要方法:
- 在碳化物 (SiC) 晶片的面上生长的表轴石墨烯上制造FET.
- 晶体管性能的表征,专注于切断频率和门长度.
主要成果:
- 对于240纳米门长的晶体管,实现了100千兆赫的切断频率.
- 与相同网关长度的晶体管相比,证明了优越的高频性能.
结论:
- 长轴石墨烯是下一代高频晶体管的一个有前途的材料.
- 石墨烯FET为高速电子设备提供了比基于的技术显著的进步.
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