伪电容性贡献用于在高度排序的V组中孔性过渡金属氧化物中储存电荷,具有面向异位的分层纳米晶体域
Kirstin Brezesinski1, John Wang, Jan Haetge
1Institute of Physical Chemistry, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 58, 35392 Giessen, Germany.
Journal of the American Chemical Society
|May 4, 2010
概括
使用块共聚合物合成了高度排序的中孔性过渡金属氧化物薄膜. 这些材料具有优越的电化学性能,可用于储能应用.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 电化学 电化学 电化学
背景情况:
- 两类块共聚物作为有效的模板,用于创建周期性无机纳米结构.
- 对于先进的应用来说,开发具有控制的晶体学方向的有序等孔材料至关重要.
研究的目的:
- 为了合成和表征高度有序的中孔氧化 (TaNbO5),氧化 (Nb2O5) 和氧化 (Ta2O5) 薄膜.
- 研究这些新型半孔材料的电化学特性,特别是伪电容性电荷存储.
主要方法:
- 无机sol-gel前体与聚乙烯-co-butylene-b-poly (乙烯氧化物) 双块共聚合物 (KLE) 的联合组装.
- 热处理以诱导结晶并形成有序的立方孔-固体结构.
- 在各种基板上结晶学对齐和中孔结构的表征.
主要成果:
- 成功地制造出具有高度结晶性的T-Nb2O5,L-Ta2O5和TaNbO5半孔薄膜,具有有序的立方孔固体结构.
- 在多种基质上实现了高晶体对齐,克服了传统表皮质的局限性.
- 与无形对应物相比,半孔Nb2O5薄膜显示出明显增强的伪容量电荷存储.
结论:
- 合成方法可以生产具有可调节性质的定向半孔过渡金属氧化物.
- 中等度和晶体学定向的独特组合显著提高了电化学性能,特别是间隙伪电容.
- 这些材料对高性能储能设备具有前景.
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