Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Fourier pixels for bidirectional light control.

Nature·2026
Same author

Broadband, Compact, and Training-Free Optical Processors for Parallel Image Classification.

ACS nano·2026
Same author

Optical Fourier Surfaces for Integrated Photonics.

ACS nano·2026
Same author

Author Correction: Hidden states and dynamics of fractional fillings in twisted MoTe<sub>2</sub> bilayers.

Nature·2026
Same author

Observation of coherent ferron emission and propagation.

Nature materials·2026
Same author

Anisotropic Exciton Transport in a Lamellar CsPbBr<sub>3</sub> Nanocrystal Superlattice.

Nano letters·2026

相关实验视频

Updated: Jun 12, 2026

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids
13:29

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

从半导体纳米晶体进行热电子转移.

William A Tisdale1, Kenrick J Williams, Brooke A Timp

  • 1Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA.

Science (New York, N.Y.)
|June 19, 2010
PubMed
概括

研究人员展示了从化纳米晶体到二氧化的快速热电子转移,这是通过从阳光中获取更多能量来提高太阳能电池效率的关键步骤.

科学领域:

  • 材料科学 材料科学 材料科学
  • 太阳能光伏发电是如何实现的
  • 纳米技术纳米技术

背景情况:

  • 半导体太阳能电池失去效率,因为充满活力的光子会产生热电荷载体,并迅速冷却.
  • 捕获这些热载体的多余能量对于推进太阳能转换至关重要.
  • 纳米晶体半导体结构提供了减缓载体冷却的潜力,但热载体转移仍然是一个挑战.

研究的目的:

  • 为了证明和描述热电子从合化 (PbSe) 纳米晶体转移到二氧化 (TiO2) 电子接受器.
  • 为了研究表面化学对热电子转移动态的影响.
  • 观察超快的界面电荷分离及其对受体材料的影响.

主要方法:

  • 使用时间分辨率光学第二波生成 (TR-SHG) 谱学.
  • 采用合性化 (PbSe) 纳米晶体作为热电子源.
  • 使用二氧化 (TiO2) 作为电子受体材料.

主要成果:

  • 成功观察并证实了超快的热电子从PbSe纳米晶体转移到TiO2.
  • 证明适当的化学表面处理可显著加快电荷转移过程,超出预期.
  • 在TiO2中观察到连贯的原子振动,由50 femtosecond以下的电荷分离过程中产生的接口电场驱动.

更多相关视频

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

相关实验视频

Last Updated: Jun 12, 2026

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids
13:29

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

结论:

  • 从PbSe纳米晶体到TiO2的热电子转移是可行的,并且可以通过表面工程显著提高.
  • 观察到的现象为有机-无机接口的基本电荷转移动态提供了洞察力.
  • 这项工作为开发下一代太阳能电池铺平了道路,这些太阳能电池可以利用热载体能量提高效率.