在合性转移稳定的gamma-Ga2O3纳米晶体中调整大小的光
Ting Wang1, Shokouh S Farvid, Mutalifu Abulikemu
1Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.
Journal of the American Chemical Society
|June 23, 2010
概括
氧化 (Ga(2) O(3)) 纳米晶体表现出从紫外线到蓝色的尺寸调节的光发光. 它们的光衰变和能量可以通过调整纳米晶体大小来控制,从而实现新的光电子应用.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 固态物理 固态物理
背景情况:
- 氧化 (Ga(2) O(3)) 是一种技术上重要的材料.
- 在纳米级控制Ga(2) O(3) 的光学和电气特性对于先进的应用至关重要.
- 了解Ga(2)O(3) 中与缺陷相关的现象是其功能化的关键.
研究的目的:
- 为了合成高氧化物 (Ga(2) O(3) 纳米晶体,控制大小和晶体结构.
- 为了研究光发光特性及其对纳米晶体大小的依赖.
- 探索Ga(2) O(3) 纳米晶体在光电子设备中的潜力.
主要方法:
- 均氧化 (Ga(2) O(3)) 纳米晶体的合合成.
- 纳米晶体大小,晶体结构 (元稳立方玛相) 和尺寸分布的表征.
- 光发光谱学用于研究辐射特性和衰变动态.
主要成果:
- 从紫外线到蓝色的Ga(2) O(3) 中显示的尺寸调节的光发光.
- 观察到基于缺陷的捐赠者-接受者对重组,以毫秒寿命主导光发光.
- 显示了尺寸依赖的光衰变和能量,与捐赠者-接受者分离相关.
- 确定了影响光学和电导电性的缺陷状态.
结论:
- 通过纳米晶体尺寸控制,可以实现Ga(2) O(3) 光学属性的合理和可预测的调整.
- 局部缺陷相互作用可以通过改变纳米晶体大小来操纵.
- 单分散的Ga(2) O(3) 纳米晶体对多功能光电子结构和设备具有前景.
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