有机单晶p-n连接纳米带
Yajie Zhang1, Huanli Dong, Qingxin Tang
1Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
Journal of the American Chemical Society
|August 5, 2010
概括
研究人员为纳米电子制造创造了有机单晶p-n连接纳米丝带. 这些纳米丝带显示出对未来设备的充电传输和光伏性能有前途.
科学领域:
- 有机电子学有机电子学
- 纳米技术纳米技术
- 材料科学是一种材料科学.
背景情况:
- 有机纳米电子需要高性能纳米尺寸的p-n连接.
- 这种连接的制造对于集成电路至关重要.
研究的目的:
- 用有机半导体证明单晶p-n连接纳米带的形成.
- 为了研究它们的生长和运输特性.
主要方法:
- 选择性结晶的铜六甲甲氨酸 (F(16) CuPc,n型) 在铜甲氨酸 (CuPc,p型) 单晶纳米丝带.
- 分析结晶参数,包括分子结构,格子常数和pi堆叠.
- 制造场效应晶体管和光伏设备.
主要成果:
- 成功形成单晶p-n连接纳米丝带.
- 观察到的双极运输与平衡的载体流动性 (0.05 cm(2) V(-1) s(-1) 对于F(16) CuPc和0.07 cm(2) V(-1) s(-1) 对于CuPc).
- 在模拟的阳光下,在一个基本的光伏设备中证明了电流纠正.
结论:
- 离散的p-n连接纳米带可以通过受控的选择性结晶来实现.
- 这些纳米丝带是研究有机-有机界面电荷传输和光伏行为的理想系统.
- 这些发现为先进的有机纳米电子设备铺平了道路.
相关概念视频
01:11P-N junction
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
01:16Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
01:24Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...