全形态氧化物透明,灵活的薄膜晶体管. 双层门介电物的效率
Jun Liu1, D Bruce Buchholz, Jonathan W Hennek
1Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, USA.
Journal of the American Chemical Society
|August 12, 2010
概括
研究人员使用无形金属氧化物开发出灵活,透明的薄膜晶体管. 这些设备使用了一种新的双层门介电和无形--氧化物,以提高性能和机械灵活性.
科学领域:
- 材料科学 材料科学 材料科学
- 电子工程 电子工程
- 光电学是指光电子产品.
背景情况:
- 薄膜晶体管 (TF-TFT) 对于灵活的电子产品至关重要.
- 开发具有光学透明度和机械灵活性的TF-TFT仍然是一个挑战.
- 无形氧化物半导体为高性能透明电子产品提供了潜力.
研究的目的:
- 制造光学透明和机械灵活的TF-TFT,仅使用无形金属氧化物薄膜.
- 为了研究一种新型无形Ta(2) O(5) /SiO(x) 双层门介电器的性能.
- 使用无形--锡氧化物 (a-ZITO) 作为半导体通道和导体电极.
主要方法:
- 在塑料基板上制造TF-TFT.
- 构建一个双层门介电,包括无形的TaO2O5和蒸气沉积的SiOx (v-SiOx).
- 在半导体通道和透明氧化物导体 (TOC) 电极中使用a-ZITO.
主要成果:
- 这种a-Ta(2)O(5) /v-SiO(x) 双层介电增强了接口兼容性和设备性能.
- 取得了大约20厘米的现场效应移动性) / V x s.
- 在低工作电压下 (大约) 证明了高启动电流 (>10(-4) A) 和电流开关比率 (>10(5)). 4.0 V) 的情况.
结论:
- 开发的全无形氧化物TF-TFT表现出卓越的光学透明度和机械灵活性.
- 新的双层门介电设计与单层介电相比,显著提高了设备性能.
- 这些发现为先进的灵活和透明的电子应用铺平了道路.
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