电氧化表轴石墨烯通道场效应晶体管与单壁碳纳米管薄膜门电极
Palanisamy Ramesh1, Mikhail E Itkis, Elena Bekyarova
1Center for Nanoscale Science and Engineering, Department of Chemistry, University of California, Riverside, California 92521, USA.
Journal of the American Chemical Society
|September 30, 2010
概括
在酸中电化学氧化表石墨烯 (EG) 创造了新的反应通道,改善了其电子特性. 这一过程提高了石墨烯场效应晶体管的性能,与打开能量差距的其他化学方法不同.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 在碳化 (SiC) 基板上生长的环氧石墨烯 (EG) 是电子应用的一个有前途的材料.
- 了解化学修饰对EG电子性能的影响对于设备优化至关重要.
- 现有的化学处理,如共价功能化,可以引入缺陷并改变电子带结构.
研究的目的:
- 为了研究使用酸的电化学氧化对表轴石墨烯电子性质的影响.
- 与石墨相比,探索EG在电氧化过程中可用的独特反应通道.
- 评估化学加工EG在场效应晶体管 (FET) 中的性能.
主要方法:
- 在酸中氧化石墨烯的电化学氧化.
- 制造用于阻力测量的宏观石墨烯通道.
- 使用温度依赖的电阻测量对设备性能进行表征.
- 用单壁碳纳米管电极制造和测试石墨烯场效应晶体管.
主要成果:
- 电化学氧化引入了EG的新反应通道,促进了电解质的透.
- 电氧化EG通道表现出电阻在温度下降时的对数增长,这是二维电子气体的特征.
- 与原始EG相比,用电氧化EG制造的石墨烯场效应晶体管显示出更好的开关比率和载体移动性.
- 性能提升归因于在缺陷的顶层氧化后发现了更高质量的内部石墨烯层.
结论:
- 在酸中的电化学氧化提供了一种独特的方法来修改石墨烯的电子性质.
- 这种方法提高了石墨烯场效应晶体管的性能,而不会引入能量差距,与共价化学方法形成鲜明对比.
- 该过程揭示了利用内部石墨烯层改善电子设备特性的潜力.
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