来自基于含的酸的双极薄膜晶体管的高平衡孔和电子流动性
Yi-Yang Liu1, Cheng-Li Song, Wei-Jing Zeng
1State Key Laboratory of Applied Organic Chemistry (SKLAOC), College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China.
Journal of the American Chemical Society
|October 29, 2010
概括
研究人员通过在基于的场效应晶体管 (FET) 中用取代C-H键来设计高性能有机半导体. 这一策略产生了具有平衡高孔和电子流动性的材料,为先进的双极FET应用铺平了道路.
科学领域:
- 有机电子学有机电子学
- 材料科学是一种材料科学.
- 半导体物理 半导体物理
背景情况:
- 基于乙烯的有机半导体对于场效应晶体管 (FET) 来说至关重要.
- 在有机FET材料设计中,实现平衡的双极电荷传输 (孔和电子) 仍然是一个挑战.
- 修改分子结构是提高半导体性能的关键.
研究的目的:
- 开发一种用于设计高性能,双极的有机半导体材料的新战略.
- 为FET应用合成和表征新的含的奥利戈衍生物.
- 为了研究的纳入对电荷运输特性的影响.
主要方法:
- 采用了一种设计策略,该策略涉及将C-H部分用原子替换为酸骨干中的酸原子.
- 合成了两种新型有机半导体,分别是6,13-bis (((triisopropylsilylethynyl) anthradipyridine (1) 和8,9,10,11-tetrafluoro-6,13-bis ((triisopropylsilylethynyl) -1-azapentacene (3)),这些半导体是通过合成的.
- 测量了合成材料的场效应晶体管 (FET) 特性,以确定电荷载体的移动性.
主要成果:
- 两种合成材料都表现出高和平衡的孔 (μ(h)) 和电子 (μ(e)) 流动性.
- 材料1展示的μ (h) = 0.11cm2/V·s和μ (e) = 0.15cm2/V·s.
- 材料3显示μh) = 0.08cm2/V·s和μe) = 0.09cm2/V·s,证实了两极性行为.
结论:
- 替换C-H与在oligoacenes是一种可行的策略,用于创建高性能双极FET材料.
- 含的酸为先进的有机电子设备提供了有前途的特性.
- 这项工作为下一代双极有机半导体的合理设计开辟了新的途径.
相关概念视频
01:11P-N junction
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:24Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:17Characteristics of MOSFET
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
01:16Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
01:22Bipolar Junction Transistor
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
The structure...