在高性能纳米级晶体管绝缘体层上的超薄化合物半导体
Hyunhyub Ko1, Kuniharu Takei, Rehan Kapadia
1Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
Nature
|November 12, 2010
概括
研究人员开发了一种新方法,在上集成化 (InAs),制造先进的半导体对绝缘体 (XOI) 晶体管. 这种方法克服了传统方法的局限性,为更快的电子设备铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- (Si) 电子面临着扩展限制,推动了对替代半导体的研究,以提高性能.
- 高流动性III-V复合半导体在Si上的异质整合提供了一个有前途的途径,将先进的特性与已建立的Si处理相结合.
- 传统的Si上的异质增长会带来诸如高缺陷密度和接口泄漏等挑战.
研究的目的:
- 探索一种表轴转移方法,将超薄,单晶的甲 (InAs) 集成到上绝缘体 (SOI) 基板上,称为InAs-on-insulator (XOI).
- 研究InAs XOI晶体管的电特性,并了解量子束对传输特性的影响.
- 开发一个高质量的INA/消电接口,以提高设备的性能.
主要方法:
- 超薄单晶InAs层在Si/SiO(2) 基板上经过表轴转移.
- 使用InAs XOI平台制造场效应晶体管 (FET).
- 实验性表征和模拟,以分析电特性和量子束效应.
- 开发一种新的热生长的接口InAsO (厚度约1纳米) 层 (厚度约1纳米),以改进InAs/介电接口.
主要成果:
- 通过表轴转移证明了在Si/SiO(2) 上超薄InAs的成功集成,从而创建了InAs XOI平台.
- 阐明了量子束在超薄InAs XOI层的传输特性中的重要作用.
- 通过使用新的InAsO (x) 接口层,实现了高质量的InAs/介电接口.
- 制造的InAs XOI FET在0.5V时表现出~1.6 mS μm(-1) 的峰值传导率,开/关电流比>10,000.
结论:
- 表轴转移方法为传统的异质表轴转移提供了一个可行的替代方案,用于在Si上集成高流动性化合物半导体.
- 由于量子封闭效应,InAs XOI平台,特别是具有超薄层的平台,显示出下一代高性能电子设备的潜力.
- 新的InAsO (x) 接口层对于在InAs XOI设备中实现高质量的接口和出色的晶体管性能至关重要.
相关概念视频
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