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Updated: Jun 6, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

灵活的低压有机薄膜晶体管由低温,环境溶液可加工的无机/有机混合门介电材料实现

Young-geun Ha1, Sunho Jeong, Jinsong Wu

  • 1Department of Chemistry, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.

Journal of the American Chemical Society
|November 20, 2010
PubMed
概括

新型交联无机/有机混合混合 (CHB) 介电薄膜使低压有机薄膜晶体管 (OTFT) 操作成为可能. 这些光滑,可调节的CHB薄膜具有出色的绝缘性能,可提供高效的设备性能.

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相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...