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相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

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相关实验视频

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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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低温,高性能,溶液加工的氧化薄膜晶体管.

Seung-Yeol Han1, Gregory S Herman, Chih-hung Chang

  • 1School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, Oregon 97331, USA.

Journal of the American Chemical Society
|March 23, 2011
PubMed
概括

溶液处理的 (III) 氧化物 (In2O3) 薄膜晶体管 (TFT) 实现了高性能. 在氧气/臭氧 (O2/O3) 大气中的化在较低温度下增强了TFT特性.

科学领域:

  • 材料科学 材料科学 材料科学
  • 电子 电子 电子 电子 电子 电子 电子
  • 纳米技术 纳米技术

背景情况:

  • 氧化 (In2O3) 是用于薄膜晶体管 (TFT) 的一个有前途的n型半导体.
  • 解决方案加工制造方法为传统真空技术提供了具有成本效益和可扩展性的替代方案.

研究的目的:

  • 使用基于溶液的旋转涂层方法开发高性能In2O3薄膜晶体管 (TFT).
  • 调查火大气和温度对In2O3 TFTs电气性能的影响.

主要方法:

  • 通过使用印 (III) (InCl3) 前体在乙二中通过旋转涂层制造In2O3薄膜,并添加乙烯基醇以使薄膜均.
  • 在空气或O2/O3大气中在200至600°C的温度下对In2O3薄膜进行火.
  • 描述TFT性能,包括场效应移动性和开/关电流比.

主要成果:

  • 在空气中在500°C时炼的TFT显示了高场效应流动性55.26cm2V{-1}s{-1}和I{-on}/I{-off}比率为10{-7).
  • 在200300°C时在O2/O3中炼的In2O3TFT显示出出色的n型行为,移动性为0.8522.14cm2 V(-1) s(-1) 和I(on) /I(off) 比率为10(5) 10(6).
  • 在较低的加工温度下,O2/O3 化气氛显著提高了 TFT 的性能.

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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

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结论:

  • 通过溶液处理的In2O3 TFT可以达到与真空处理设备相比较的高性能.
  • 在O2/O3大气中火是一种有效的策略,可以在降低温度下改善In2O3 TFT的电特性.
  • 这项工作证明了基于In2O3的高性能电子产品的可行低温制造路线.