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在双纳米结构 Telluride 中异常电子传输

J Q He1, J R Sootsman, L Q Xu

  • 1Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA. Jiaqing-he@northwestern.edu

Journal of the American Chemical Society
|May 12, 2011
PubMed
概括

Telluride (PbTe) 系统中的双纳米结构揭示了不寻常的电荷传输. (Pb) 和反 (Sb) 沉之间的间扩散产生了相间潜力,影响温度变化带载体的移动性.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...