证据表明,在道连接处与欧性Ga-In (EGaIn) 顶部接触的道中,乙烯二甲酸盐的SAM中存在量子干扰
Davide Fracasso1, Hennie Valkenier, Jan C Hummelen
1Stratingh Institute for Chemistry, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Journal of the American Chemical Society
|May 13, 2011
概括
这项研究表明,线性结合的烯衍生物的电流密度明显高于交叉结合或断裂结合的. 量子干扰效应是理解分子电子运输中的这些差异的关键.
科学领域:
- 分子电子学分子电子学
- 有机电子学有机电子学
- 量子干扰是一种量子干扰.
背景情况:
- 自组装单层 (SAM) 对于分子电子设备至关重要.
- 了解通过结合分子的电荷传输对于设备优化至关重要.
- 以乙烯基基醇功能化的烯衍生物具有可调节的电子性质.
研究的目的:
- 为了比较不同合类型的三种炭衍生物的电流密度 (J) 与应用偏差 (V).
- 调查合在分子单层电荷传输特性中的作用.
- 为了将实验发现与单分子行为理论计算相关联.
主要方法:
- 制造SAM的线性结合 (AC),交叉结合 (AQ) 和断形结合 (AH) 的原衍生物.
- 电气表征使用液体环氧化Ga-In (EGaIn) 与原生Ga(2) O(3) 皮肤进行顶部接触.
- 实验 J-V 数据与密度功能紧密结合 (gDFTB) 计算的比较.
主要成果:
- 线性结合 (AC) 的电流密度比AQ和AH高1-2个数量级.
- 衡量AH和AQ的J-V特征没有显著差异.
- 实验结果显示,与单个分子的gDFTB计算具有良好的定性一致性.
结论:
- 由于量子干扰效应,线性联的交流电比AQ和AH的导电能力要高得多.
- AQ和AH具有相似的导电性,因此很难在实验中区分它们.
- 分子-分子相互作用似乎在这些SAM的观察到的运输特性中起到很小的作用.
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