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Updated: May 28, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

测量和统计分析单分子电流-电压特征,过渡电压光谱和道障碍高度

Shaoyin Guo1, Joshua Hihath, Ismael Díez-Pérez

  • 1Center for Bioelectronics and Biosensors, Biodesign Institute, and Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287, USA.

Journal of the American Chemical Society
|October 14, 2011
PubMed
概括

一种新的断裂连接方法可以快速测量单分子连接特征. 接触电阻,而不是能量水平对齐,主要决定了分子连接处的导电量变化.

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