薄膜晶体管中的高性能弱供体-受体聚合物:受体对电子特性,双极导电性,移动性和热稳定性的影响
Jonathan D Yuen1, Jian Fan, Jason Seifter
1Center for Polymers and Organic Solids, University of California, Santa Barbara, California 93106, USA.
Journal of the American Chemical Society
|November 3, 2011
概括
研究人员探索了用于晶体管应用的捐赠-接受聚合物. 更强大的受体单元,如比斯提亚迪亚 (BBT),显著提高了晶体管的性能和热稳定性.
科学领域:
- 有机电子学有机电子学
- 聚合物科学 聚合物科学
- 材料化学 材料化学
背景情况:
- 捐赠-接受聚合物对于有机电子设备至关重要.
- 通过分子设计调整电子特性是提高性能的关键.
- 基于二甲 (DPP) 的聚合物提供了有前途的半导体特性.
研究的目的:
- 研究不同受体单元对DPP基聚合物的电子,物理和晶体管性能的影响.
- 为了建立一个结构-属性关系的捐赠者-接受者相互作用强度和聚合物性能.
- 确定高性能有机场效应晶体管 (OFET) 的最佳聚合物设计.
主要方法:
- 一个聚合物系列的合成基于dketopyrrolopyrrole (DPP) 的供体单位.
- 整合了不同的受体单元,系统调节了接受电子的强度: (B),乙 (BT) 和乙 (BBT).
- 电子,物理和晶体管属性的表征,包括电荷载体的移动性和热稳定性.
主要成果:
- 所有合成的聚合物都表现出优异的晶体管性能,移动性超过0.1cm(2)V(-1) 秒(-1).
- 含有强受比斯提亚 (BBT) 单元的聚合物实现了超过1厘米的移动性.
- BBT单元增强了链间相互作用,导致了卓越的热稳定性和双极晶体管的行为.
结论:
- 捐赠-接受聚合物中受体单元的强度直接影响电子特性和设备性能.
- 比斯提亚 (BBT) 是开发高流动性,热稳定的有机半导体的有效受体.
- 基于DPP的聚合物的战略分子设计可以导致有机电子产品的先进材料.
相关概念视频
Semiconductors
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Carrier Transport
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:


