在碳化中对缺陷旋转量子位进行室温连贯控制
William F Koehl1, Bob B Buckley, F Joseph Heremans
1Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA.
Nature
|November 5, 2011
概括
研究人员证明了用于量子技术的碳化 (SiC) 中可控制的量子自旋缺陷. 这些缺陷,类似于钻石.
科学领域:
- 量子计算和自旋电子学
- 固态物理 固态物理
- 材料科学 是一种材料科学.
背景情况:
- 半导体中的电子旋转是量子控制的关键.
- 钻石中的空缺中心是固态量子比特.
- 探索替代半导体缺陷以提高功能至关重要.
研究的目的:
- 研究和证明可控制的碳化 (SiC) 量子自旋缺陷.
- 为了识别超越钻石空缺中心的新奇量子位候选人.
- 评估SiC缺陷对于量子信息技术的潜力.
主要方法:
- 光学和微波技术用于解决和控制自旋状态.
- 时间域连贯的控制实验.
- 在4H-SiC中缺陷旋转属性的表征从20到300K.
主要成果:
- 在4H-SiC中证明了光学定位性和对多个缺陷旋转状态的连贯控制.
- 识别了四个不等价的中性碳-二旋转状态和两个未识别的旋转状态.
- 观察到的自旋相干性质与钻石空隙中心相当.
结论:
- 4H-SiC中的缺陷旋转状态是量子信息应用的有希望的候选者.
- 这些缺陷在电信波长附近是光学活跃的.
- 的工业规模制造使得这些缺陷非常适合集成量子技术.
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