由于Cu缺乏,BiCuSeO的热电性能得到了显著的提高
Yong Liu1, Li-Dong Zhao, Yaochun Liu
1State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Journal of the American Chemical Society
|November 17, 2011
概括
在BiCuSeO中缺少铜可显著提高热电性能. 这种增强的BiCu{0.975) SeO为中温热电应用提供了有前途的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 化学 化学 化学
背景情况:
- 像BiCuSeO这样的分层氧化被用于热电应用.
- 优化热电性能需要平衡电导率,西贝克系数和热导率.
- 现有的BiCuSeO材料具有中度的热电特性.
研究的目的:
- 调查铜缺乏对BiCuSeO热电特性的影响.
- 为了提高BiCuSeO中热电功率 (ZT) 的值,用于中温应用.
- 了解通过铜空缺引入运营商的机制.
主要方法:
- 合成具有不同铜缺陷 (x = 0-0.1) 的BiCu(1-x) SeO化合物.
- 在高温下 (高达650°C) 测量电导率和Seebeck系数.
- 热导率的表征和热电功率 (ZT) 的计算.
主要成果:
- 铜的缺陷在 (Cu(2) Se(2)) ((2-) 层中引入电荷载体,显著增加电导率.
- 在650°C时,BiCu(0.975) SeO的最大电导率达到3 × 10^3 S m(-1),比原始BiCuSeO (470 S m(-1)) 显著改善.
- 低导热率 (∼0.5 W m(-1) K(-1)) 与较大的Seebeck系数 (+273 μV K(-1)) 相结合,导致BiCu(0.975) SeO在650°C时的ZT为0.81,高于原始BiCuSeO的0.50.
结论:
- 引入铜缺陷是一种有效的策略,可以提高BiCuSeO的热电性能.
- 优化的BiCu{0.975) SeO具有显著改善的热电特性,使其成为中温热电器件的可行候选者.
- 该研究阐明了铜空缺在调节电荷载体度和热电效率方面的作用.
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