Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
The Ideal Diode01:15

The Ideal Diode

A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Small-signal Diode Model01:18

Small-signal Diode Model

In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Drug-Conjugated Tam-NHC-Gold(I) Complexes Overcome <i>ESR1</i> Mutant Breast Cancer Resistance and Downregulate the RAMP3/CALCR Signaling Pathway.

Journal of medicinal chemistry·2026
Same author

Hepatitis C virus inhibits the E2F2/PI3K/AKT signaling pathway through miR-378b and leads to glycolipid metabolism disorders in the liver.

Molecular biology reports·2026
Same author

Learning Occlusion-Dynamic Invariant Representations for Multi-Object Tracking.

IEEE transactions on image processing : a publication of the IEEE Signal Processing Society·2026
Same author

Designer Dynamic DNA Nanoaggregate in Living Cell for Mitochondrial Energy Restriction.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Discovery of NTQ2494, a potent and orally bioavailable inhibitor of AXL kinase for the treatment of human tumors.

European journal of medicinal chemistry·2026
Same author

Data-Driven Interrogation of Reactivity in Acid-Catalyzed Carbonyl-Olefin Metathesis with Machine Learning and Large Language Models.

Journal of the American Chemical Society·2026

相关实验视频

Updated: May 26, 2026

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

一个全的被动光学二极管.

Li Fan1, Jian Wang, Leo T Varghese

  • 1Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.

Science (New York, N.Y.)
|December 24, 2011
PubMed
概括

研究人员开发了一种被动光学二极管,用于芯片上处理. 该设备实现了高的前向后向传输比率,可以在没有主动组件的情况下实现高效的光学信息路由.

科学领域:

  • 光子学 是一个光子学.
  • 非线性光学是非线性光学.
  • 集成光学 集成光学 集成光学

背景情况:

  • 实现被动光二极管效应对于芯片上的光学信息处理至关重要.
  • 现有的方法往往需要活性成分或难以实施.

研究的目的:

  • 通过使用环共振器来证明被动光二极管效应.
  • 为了实现高光学非互惠的电信波长.

主要方法:

  • 在一个带有两个环共振器 (5微米半径) 的装置中利用光学非线性.
  • 在广泛的输入功率级别中被动运行设备.

主要成果:

  • 展示了高达28分贝的前向后向传输比率.
  • 实现了对前向和后向输入功率的变化具有强大的光学非互惠性.
  • 该设备超紧,兼容补充金属氧化物半导体 (CMOS) 处理.

结论:

  • 一个被动光学二极管已经成功演示.
  • 该设备为芯片上光学信息处理应用提供了一个有前途的解决方案.
  • 与CMOS技术的兼容性促进了与现有制造工艺的整合.

更多相关视频

Development of Whispering Gallery Mode Polymeric Micro-optical Electric Field Sensors
08:32

Development of Whispering Gallery Mode Polymeric Micro-optical Electric Field Sensors

Published on: January 29, 2013

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

相关实验视频

Last Updated: May 26, 2026

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

Development of Whispering Gallery Mode Polymeric Micro-optical Electric Field Sensors
08:32

Development of Whispering Gallery Mode Polymeric Micro-optical Electric Field Sensors

Published on: January 29, 2013

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020