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Updated: May 24, 2026

U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
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(VI) 终端氧化物复合物的合成:分子几何由反向跨影响驱动

Boris Kosog1, Henry S La Pierre, Frank W Heinemann

  • 1Inorganic Chemistry, Department of Chemistry and Pharmacy, Friedrich-Alexander-University of Erlangen-Nuremberg, Egerlandstrasse 1, 91058 Erlangen, Germany.

Journal of the American Chemical Society
|February 28, 2012
PubMed
概括

合成和表征了新的 (VI) 氧复合物. 连接物修饰使终端 (VI) 氧复合体在没有转接物的情况下得到稳定,从而揭示了反转影响的洞察力.

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