作为分子记忆切换装置的亚离子基复合物:电流电压特征的隔离,表征和评估
Nanda D Paul1, Utpal Rana, Sreetosh Goswami
1Department of Inorganic Chemistry, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India.
Journal of the American Chemical Society
|April 3, 2012
概括
两种罕见的Rh(III) 离子二基复合体在RAM/ROM应用中表现出极好的内存切换. 这些系统具有占主导地位的三重状态,具有铁磁合的基.
科学领域:
- 无机化学 无机化学
- 材料科学 材料科学 材料科学
- 分子电子学分子电子学
背景情况:
- 化合物是协调化学中的多功能连接体.
- 两根基复合体具有独特的电子和磁性特性.
- 开发用于先进电子应用的新材料至关重要.
研究的目的:
- 为了合成和表征罕见的阿佐离子二基复合物的Rh.
- 为了研究这些新型复合物的记忆切换特性.
- 阐明二极根系统的电子结构和磁性行为.
主要方法:
- 用于结构确定的X射线晶体学.
- 可变温度磁感应度的测量.
- 循环电压测量和电子磁共振光谱学.
- 密度函数理论 (DFT) 的计算.
主要成果:
- 成功合成了两个独特的Rh(III) 离子二基复合体.
- 证明了卓越的内存切换特性,具有高的开启/关闭比率.
- 电子结构分析显示出一个主要的三重基态.
- 证实了两个基中心之间的铁磁合.
结论:
- 报道的Rh(III) 复合体是随机访问存储器 (RAM) 和只读存储器 (ROM) 设备的有希望的候选者.
- 它们的激进性和铁磁合是它们记忆切换行为的关键.
- 这项工作扩大了激进化学的范围及其在分子电子学中的潜力.
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