石墨烯阻隔器,一个带有门控制的Schottky屏障的三极管装置
Heejun Yang1, Jinseong Heo, Seongjun Park
1Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.
概括
研究人员开发了一种石墨烯可变屏障阻隔器 (GB),实现了高10^5开/关比. 石墨烯电子的这一突破利用了一种新的石墨烯-接口来提高晶体管的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米电子技术纳米电子技术
背景情况:
- 石墨烯电子研究面临的挑战是,在传统设备结构中实现足够的开启/关闭电流比率 (开启/关闭).
- 现有的石墨烯晶体管往往难以满足实际电子应用的性能需求,原因是当前调制的局限性.
研究的目的:
- 通过开发一种新的设备结构来克服传统石墨烯晶体管的局限性.
- 在基于石墨烯的活性设备中实现高开/关电流比.
- 为了展示这个新设备在逻辑电路应用中的潜力.
主要方法:
- 开发一个三端活性装置:一个石墨烯可变屏障阻隔器 (GB).
- 使用石墨烯和化之间的原子尖接口进行制造.
- 通过门电压调制控制石墨烯-Schottky屏障高度.
主要成果:
- 在设备电流上实现了很大的调制,启/关比为10^5.5.
- 由于没有费米级定位,斯科特基屏障高度的可调性已被证明为0.2电子伏特.
- 在150mm晶圆上成功制造了互补的p型和n型GB,并将其集成到逆变器和半子逻辑电路中.
结论:
- 石墨烯可变屏障阻隔器 (GB) 提供了一个可行的解决方案,用于在石墨烯电子中实现高开/关比.
- 原子敏的石墨烯-接口对于有效的屏障调制和设备性能至关重要.
- 经过证明的逻辑电路突出显示了GBs在未来纳米电子应用中的潜力.
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