通过将电子中性构件与分子内"符合性锁"相结合,可以获得稳定,高流动性的p和n通道聚合物半导体
Hui Huang1, Zhihua Chen, Rocio Ponce Ortiz
1Department of Chemistry and the Materials Research Center, Northwestern University, Evanston Illinois 60208, USA.
Journal of the American Chemical Society
|June 12, 2012
概括
新的乙 (TVT) 半导体使高性能有机电子成为可能. 这些稳定的平面材料为先进的有机薄膜晶体管 (TFT) 和电路提供了高电荷载体的移动性.
科学领域:
- 材料科学 材料科学 材料科学
- 有机电子 有机电子
- 半导体物理 半导体物理
背景情况:
- 高性能有机电子需要了解分子架构对有机薄膜晶体管 (TFT) 性能的影响.
- 开发平面,电子中性聚合物半导体是一个关键目标,但面临着合成挑战.
研究的目的:
- 为了合成和表征一种新的稳定,平面,高流动性的有机半导体类别,基于一个乙烯 (TVT) 构建块.
- 调查TVT构件结构与由此产生的半导体电子特性和设备性能之间的关系.
主要方法:
- 使用易于访问的,电子中立的TVT构建块,具有分子内S·O"形态锁".
- 使用密度函数理论 (DFT) 计算,X射线衍射和格子凝聚力指标.
- 制造和测试有机薄膜晶体管 (TFT) 和补充逆变器电路.
主要成果:
- 实现稳定,结构平坦,可溶液处理的分子和宏分子半导体.
- 在空气中显示的高载体流动性:0.5 cm2/V·s (n型) 和0.05 cm2/V·s (p型).
- 通过喷墨打印制造的全TVT聚合物互补逆变器具有高电压增益 (~50) 和具有高振荡频率 (~1.25 kHz) 的环振荡器.
结论:
- 由于其微弱的电子丰富性和超分子平面化,TVT构建块对于创建高性能有机半导体是有效的.
- 这些材料对下一代有机电子有前途,包括可打印的高增益电路和高频振荡器.
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