无价金属的化学介质化成2D层的Bi2Se3纳米丝带

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Updated: May 20, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Kristie J Koski1, Colin D Wessells, Bryan W Reed

  • 1Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.

Journal of the American Chemical Society
|July 27, 2012
PubMed
概括

研究人员开发了一种化学方法,将零价金属原子插入到树脂化物 (Bi(2) Se(3)) 纳米丝带中. 这种技术使得对潜在的新物理性质和能源应用的超静电介质测量成为可能.

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