在基于其电阻切换性能的非易失性内存设备应用中,斯宾尔费里特材料的机会
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
Journal of the American Chemical Society
|August 31, 2012
概括
由于其优良的电阻开关特性,spinel ferrites对非易失性内存设备有很大的希望. 这项研究阐明了Pt/NiFe{2O}{4}/Pt结构中的导线形成机制.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 设备物理 设备物理
背景情况:
- 目前正在探索用于非挥发性记忆应用的 spinel 铁矿.
- 电阻切换行为是内存设备功能的关键.
研究的目的:
- 为了证明在非易失性记忆器件中斯宾尔费里特的潜力.
- 为了研究Pt/NiFe{2O}{4}/Pt结构的电阻切换性能和机制.
主要方法:
- 制造Pt/NiFe{2O}{4}/Pt器件. 制造Pt/NiFe{2O}
- 电阻开关性能 (电压,保持,耐久性) 的表征.
- 传导机制 (欧米克,肖特基辐射) 和温度依赖性质的分析.
主要成果:
- 该Pt/NiFe(2)O(4) /Pt结构表现出低工作电压,高设备产量,长时间保留 (10^5秒) 和良好的耐用性 (2.2 × 10^4周期).
- 欧姆导电在低电阻状态和低压高电阻状态中占主导地位.
- 在更高电压的高电阻状态下观察到肖特基辐射.
结论:
- 在Pt/NiFe(2)O(4)/Pt装置中的电阻切换是由于导电丝的形成和破裂造成的.
- 氧气空缺和阴离子氧化还原效应对于开关机制至关重要.
- 脊柱铁矿是先进非挥发性内存应用的可行候选者.
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