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相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...

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相关实验视频

Updated: May 18, 2026

Silicon Microchips for Manipulating Cell-cell Interaction
23:21

Silicon Microchips for Manipulating Cell-cell Interaction

Published on: August 30, 2007

一种物理上短暂的电子形式.

Suk-Won Hwang1, Hu Tao, Dae-Hyeong Kim

  • 1Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.

Science (New York, N.Y.)
|September 29, 2012
PubMed
概括

研究人员开发了短暂的电子产品,在使用后溶解在体内. 这一突破使得临时植入的医疗设备,如可编程杀菌剂,为医疗保健提供了新的可能性.

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
11:34

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

相关实验视频

Last Updated: May 18, 2026

Silicon Microchips for Manipulating Cell-cell Interaction
23:21

Silicon Microchips for Manipulating Cell-cell Interaction

Published on: August 30, 2007

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
11:34

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

科学领域:

  • 材料科学与工程 材料科学与工程
  • 生物医学工程 生物医学工程
  • 电气工程 电气工程

背景情况:

  • 目前的电子产品是为了长期的物理不变而设计的.
  • 需要具有可控制寿命的可植入设备,这些设备可以被再吸收到体内.
  • 这解决了永久植入物的局限性,以及对临时医疗干预的需求.

研究的目的:

  • 开发基于过渡的互补金属氧化物半导体 (CMOS) 技术.
  • 为了使可植入设备具有定义的操作寿命和随后的再吸收.
  • 集成传感器,执行器,电源和短暂系统的无线控制.

主要方法:

  • 开发新材料和制造方案,用于过渡性电子产品.
  • 设备组件的设计使得可控降解和再吸收.
  • 传感器,执行器,电源和无线控制策略的集成.
  • 暂时器件工程的理论设计工具.

主要成果:

  • 成功展示了基于的CMOS技术,具有暂时行为.
  • 功能植入器械的基本组件的整合.
  • 开发一个系统层面的例子:一个可编程的非抗生素杀菌剂.

结论:

  • 过渡性电子为临时的,可再吸收的植入式设备提供了一条途径.
  • 这项技术使新的医疗应用成为可能,例如有针对性的临时干预.
  • 开发的平台支持过渡系统的集成传感,执行,电源和控制.