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相关概念视频

Joule-Thomson Effect01:21

Joule-Thomson Effect

11.6K
The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
11.6K
Atomic Absorption Spectroscopy: Interference01:25

Atomic Absorption Spectroscopy: Interference

2.4K
Interference leads to systematic error in atomic absorption (AA) measurements by enhancing or diminishing the analytical signal or the background. These interferences can be grouped into three main categories: spectral interference, chemical interference, and physical interference.
Spectral interference occurs when signals from other elements or molecules overlap with the analyte signal, falsely elevating or masking the analyte's absorbance. This interference can be corrected using Zeeman,...
2.4K
P-N junction01:11

P-N junction

1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

841
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
841
The Joule and Joule–Thomson Experiments01:23

The Joule and Joule–Thomson Experiments

170
Consider an adiabatic system composed of two chambers, A and B, designed such that no heat flows into or out of the system. Initially, chamber A is filled with a gas at a fixed temperature T1, pressure p1, and volume V1, while chamber B is evacuated. The gas is then gradually forced through a rigid, porous barrier to chamber B, ultimately reaching temperature T2, pressure p2, and volume V2. A piston on the right side maintains a constant pressure (p2), which is lower than p1. The significant...
170

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相关实验视频

Updated: Apr 10, 2026

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
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High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

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约瑟夫森的热干扰仪

Francesco Giazotto1, María José Martínez-Pérez

  • 1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy. giazotto@sns.it

Nature
|December 22, 2012
PubMed
概括
此摘要是机器生成的。

研究人员展示了一种新的约瑟夫森热干扰仪. 该装置显示了相位依赖的热传输,证实了约瑟夫森连接处的热干扰预测,并使纳米电路中的连贯热操纵成为可能.

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科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 量子现象是一种量子现象.
  • 纳米技术 纳米技术

背景情况:

  • 约瑟夫森效应证明了宏观量子相连贯性,是超导量子干扰装置 (SQUID) 的基础.
  • 理论预测存在于Josephson连接处的相位依赖热传输,类似于电干扰仪,但实验实现仍然难以捉摸.

研究的目的:

  • 在约瑟夫森连接系统中实验研究相位依赖热传输.
  • 实现和描述电气约瑟夫森干扰仪的热模拟器.

主要方法:

  • 使用了两个温度偏差的普通金属电极,通过直流SQUID进行道合.
  • 测量热交换和温度振荡作为磁流的函数.

主要成果:

  • 观察到相位依赖的热传输,证实了理论预测.
  • 证明了磁流依赖的温度振荡高达21mK.
  • 在235mK时,达到超过60mK/Φ0的流量-温度转移系数.

结论:

  • 证实了约瑟夫森连接处存在一种独特的相位依赖热流.
  • 约瑟夫森热干扰仪能够在固态纳米电路中连贯操纵热量.
  • 为量子热传输研究和应用开辟了新的途径.