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Updated: May 13, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

在多元组件宽带间隙氧化物中产生载体:InGaZnO4

Altynbek Murat1, Alexander U Adler, Thomas O Mason

  • 1Department of Physics, Missouri University of Science & Technology, Rolla, Missouri 65409, USA.

Journal of the American Chemical Society
|March 15, 2013
PubMed
概括

了解氧化 (InGaZnO4) 的缺陷对于宽带间隙氧化物至关重要. 我们的研究确定抗体缺陷 (GaZn) 是主要的电子捐赠者,而不是氧气空缺.

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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...