基合烯酸与基/基混合单层在Si111表面上的基合
Leslie E O'Leary1, Michael J Rose, Tina X Ding
1Beckman Institute and Kavli Nanosciences Institute, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, California Institute of Technology, Pasadena, California 91125, USA.
Journal of the American Chemical Society
|June 28, 2013
概括
研究人员使用赫克反应将有机分子功能化表面,显著降低了表面重组速度. 这种方法使先进的光电极能够实现强大的电子合.
科学领域:
- 表面化学 表面化学
- 材料科学 材料科学 材料科学
- 有机电子 有机电子
背景情况:
- (Si) 表面对于电子设备至关重要,但容易发生表面重组.
- 功能化Si表面可以改善其电子性能,并使其能够实现新的应用.
研究的目的:
- 开发一种方法,使用Heck反应将小分子连接到Si(111) 表面.
- 研究表面功能化对电荷转移和表面重组速度的影响.
- 为光电极创建强大的连接.
主要方法:
- 用混合的甲基和基单层对Si(111) 的功能化.
- 奥莱芬与功能化Si表面的接.
- 化和催化激活阿里化表面.
- 各种有机基质 (4-化,维尼尔铁,原氨酸IX二甲基) 的合.
主要成果:
- 混合CH3/SC4H3-Si(111) 表面的表面重组速度显著降低 (S = 27 ± 9 cm s(-1)) 与仅含烯的表面相比 (S = 670 ± 190 cm s(-1)).
- 乙烯基铁的成功合证明了易于电子转移和强大的表面连接.
- 最后的Heck合表面保持了低的S值 (70cm s(-1),表明了高质量.
结论:
- 赫克反应为创建具有改进电子性能的功能化表面提供了一条通用途径.
- 这种多步合成方法使小分子能够稳定地连接到光电极.
- 开发的方法对制造基于的高性能电子和光电子设备具有前景.
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