狭间半导体CsBi4Te6中的超导性
Christos D Malliakas1, Duck Young Chung, Helmut Claus
1Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States.
Journal of the American Chemical Society
|September 14, 2013
概括
在狭间半导体木化 (CsBi4Te6) 中发现了超导性. 这一发现表明,使用这种材料类的兴奋剂可以产生基于半导体的新型超导体.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 固态化学 固态化学
背景情况:
- 超导性是一种零电阻的现象,通常在金属和合金中观察到.
- 狭间半导体为超导性研究提供了一个独特的,在很大程度上尚未探索的途径.
- 同源系列Cs4[Bi(2n+4) Te(3n+6) ]是最近发现的一类材料,具有潜在的新电子特性.
研究的目的:
- 为了研究狭间半导体CsBi4Te6.6中超导的潜力.
- 描述CsBi4Te6.6的超导特性,包括临界温度和临界场.
- 探索CsBi4Te6系统及其同源系列中的晶体结构和超导性之间的关系.
主要方法:
- 取决于温度的电阻测量.
- 取决于温度的磁感应度测量.
- 磁场依赖的电阻测量以确定关键场.
主要成果:
- 在p型CsBi4Te6样本中观察到超导性,其超导过渡温度 (Tc) 约为4.4K.
- 实体测量CsBi4Te6被发现不是超导体,这表明样品类型或兴奋剂的重要性.
- 一个高临界磁场 (Hc) 的大约10特斯拉估计从场依赖电阻数据.
- CsBi4Te6系统以单临床结构结晶,是Cs4[Bi(2n+4) Te(3n+6) ]同源系列的第一个成员.
结论:
- 在狭半导体CsBi4Te6.6中发现了非常规的超导性.
- 高临界场表明在强磁场环境中应用的潜力.
- 在Cs4[Bi(2n+4) Te(3n+6) ]同类系列中的兴奋剂可能会导致基于半导体的新类超导体的开发.
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