在CdSe/CdS/Au异构结构中对光发光衰减的现场光学和结构研究
Arnaud Demortière1, Richard D Schaller, Tao Li
1Center for Nanoscale Materials, ‡Materials Science Division, §Advanced Photon Source, ∥Chemical Sciences and Engineering Division, ⊥Electron Microscopy Center, Argonne National Laboratory, 9700 South Cass Ave., Argonne, Illinois 60439, United States.
Journal of the American Chemical Society
|January 22, 2014
概括
我们研究了化/硫化 (CdSe/CdS) 纳米棒上的金 (Au) 增长. 结果显示,黄金 - 硫位点迅速陷入洞穴,这是形成这些半导体/金属异构结构的关键过程.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 物理化学 物理化学
背景情况:
- 半导体/金属异构结构对于催化和电子学至关重要.
- 了解核和生长动态是控制材料特性的关键.
研究的目的:
- 研究金 (Au) 在二/硫化 (CdSe/CdS) 纳米棒上的 in situ 核化和生长.
- 在紫外线照明下阐明CdSe/CdS/Au异构结构形成背后的机制.
主要方法:
- 同步机小角度X射线散射 (SAXS) 用于结构分析.
- 时间分辨率光谱学 (短暂吸收和光发光) 用于光学属性动态.
主要成果:
- 在具有和没有紫外线照明的样本中观察到类似的光发光 (PL) 灭和衰变配置文件.
- 通过纳米粒子表面的金硫位点证明了快速 (快于3ps) 的洞陷.
结论:
- 在CdSe/CdS/Au异构形成中占主导地位的机制是表面黄金-硫位点的快速洞陷.
- 这种超快的工艺以前在只关注最终产品的研究中被忽视了.
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