相关实验视频

Updated: May 2, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.2K

兴奋剂和辅助兴奋剂在嵌入式和独立的Si纳米晶体中的优先定位

Roberto Guerra1, Stefano Ossicini

  • 1International School for Advanced Studies (SISSA) , via Bonomea 265, I-34136 Trieste, Italy.

Journal of the American Chemical Society
|February 26, 2014
PubMed
概括

这项研究探讨了化纳米晶体如何影响其性能. 与和联合剂产生稳定的电偶极,为新的应用打开了大门.

更多相关视频

Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model06:54

Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model

Published on: August 22, 2015

13.2K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

8.3K

相关概念视频

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
143