在空气稳定的表面电荷转移中,MoS2被基维奥基因 (benzyl viologen) 兴奋剂
Daisuke Kiriya1, Mahmut Tosun, Peida Zhao
1Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Journal of the American Chemical Society
|May 20, 2014
概括
乙烯 (BV) 能够使二硫化物 (MoS2) 片的稳定性 n-doping 实现空气稳定性,从而达到退化的 doping 极限. 这种表面电荷转移方法提高了设备的性能,并允许可逆控制载体密度.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 表面化学 表面化学
背景情况:
- 对于电子和光电子设备中的过渡金属二甲基化物 (TMD) 来说,稳定于空气的兴奋剂至关重要.
- 在TMD中实现高载体密度和稳定性仍然是一个重大挑战.
研究的目的:
- 为了证明空气稳定的表面电荷转移用二硫化物 (MoS2) 进行二硫化物 (MoS2) 的兴奋剂,使用二氧化物 (BV).
- 调查BV兴奋剂对MoS2特性和设备性能的影响.
- 探索兴奋剂水平的可逆性和控制.
主要方法:
- 使用烯 (BV) 作为MoS2片的表面电荷转移供体.
- 在空气和真空中稳定的特征化杂的MoS2样本.
- 制造的顶端门场效应晶体管 (FET) 带有 BV 合接触.
主要成果:
- 实现了高电子板密度 (~1.2 × 10^13 cm^-2),达到MoS2.2的退化兴奋剂极限.
- 证明了 BV 化 MoS2.2 的优异的空气和真空稳定性.
- 在金属接口的接触阻力降低了超过3倍的因素.
- 具有出色的切换特性 (下值波动~77mV/十年) 的制造FET.
- 展示了使用多烯可逆移除BV剂的方法.
结论:
- 基维洛根是一种有效的表面捐赠剂,可以在MoS2.2中实现稳定,退化的n-doping.
- BV注显著提高了接触电阻和晶体管性能.
- 由于BV兴奋剂的可逆性,因此可以根据需要对载体密度和设备功能进行控制.
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