谷地电子公司. 在MoS2晶体管中的Hall效应
K F Mak1, K L McGill2, J Park3
1Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA. Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA. plm23@cornell.edu km627@cornell.edu.
概括
研究人员在单层MoS2晶体管中观察到山谷霍尔效应 (VHE). 循环偏光控制了VHE,展示了未来电子产品的自由度.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 2D蜂格子中的电子具有一个自由度谷 (DOF).
- 预计异常的霍尔效应标志取决于山谷指数.
- 谷底电子公司为新型电子设备提供了潜力.
研究的目的:
- 通过实验观察山谷霍尔效应 (VHE).
- 调查谷地DOF负责运输的角色.
- 探索对山谷依赖现象的光电子控制.
主要方法:
- 制造单层 MoS2 晶体管.
- 用循环偏光照明照明.
- 测量异常的霍尔电压.
主要成果:
- 在单层MoS2.2中观察有限的异常霍尔电压.
- 该VHE的标志是由轻型直升机控制的.
- 由于晶体的反向对称性,在双层MoS2中没有观察到VHE.
结论:
- 实验证实了山谷霍尔效应的存在.
- 对山谷极化进行光电子控制的演示.
- 在下一代电子和光电子中为基于谷的信息处理开辟了道路.
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