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尼克尔二氧化 (dithiolene) 复杂 π-纳米板的氧化控制和高导电性:一种潜在的有机二维拓绝缘体

Tetsuya Kambe¹, Ryota Sakamoto, Tetsuro Kusamoto

¹Department of Chemistry, Graduate School of Science, The University of Tokyo , 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.

Journal of the American Chemical Society

|September 25, 2014

概括

二 (dithiolene) 复杂纳米薄膜具有高电导率 (1.6 × 10^2 S cm^-1),可根据氧化状态进行调节. 这种金属材料是有机拓绝缘体的有希望的基础.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

基于 bis ((dithiolene) 复合物的协调聚合物以其有趣的电子特性而闻名.
开发具有高导电性和潜在的拓性质的新材料是关键的研究领域.

研究的目的:

为了研究堆叠的 bis ((dithiolene) 复杂纳米片的电导率和电子性质.
探索氧化状态对这些材料导电性的影响.
评估这种材料在开发有机基二维拓绝缘体方面的潜力.

主要方法:

散装材料的合成,其中包括堆叠的 bis ((dithiolene) 复合物的纳米片.
在扫描电子显微镜下使用范德保夫法对单微样本进行电导率测量.
氧化状态的操纵和表征.
理论计算和光电子辐射光谱学.

主要成果:

准备好的材料的平均氧化状态为每复合单位的-3/4,可调整为0或-1.1.
一个单一的微片被测量出了1.6 × 10^2 S cm^-1的非常高的电导率.
观察到导电性随着氧化状态的变化而调节.
理论计算和光电子辐射光谱学证实了堆叠的纳米片的金属性质.

结论:

堆叠的 bis ((dithiolene) 复杂纳米片具有高电导率和金属电子性质.
导电率可以通过调整氧化状态来精确控制.
这种材料作为未来开发有机基二维拓绝缘体的基础平台.

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