相关实验视频

Updated: Jul 17, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

预测基于的分层结构,用于光电子应用

Wei Luo1, Yanming Ma, Xingao Gong

  • 1Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University , Shanghai 200433, P. R. China.

Journal of the American Chemical Society
|October 15, 2014
PubMed
概括

粒子群的优化设计了新的准二维材料. 化层对LED和光伏等下一代光电子设备显示出前途.

更多相关视频

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

9.4K
Fabrication and Optimization of Type II Silicon Clathrate Films06:53

Fabrication and Optimization of Type II Silicon Clathrate Films

Published on: October 14, 2025

1.2K

相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...