在FeBi2Se4中,高T (c) 铁磁性和n型导电性的共存
Kulugammana G S Ranmohotti1, Honore Djieutedjeu, Juan Lopez
1Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan , Ann Arbor, Michigan 48109, United States.
Journal of the American Chemical Society
|December 25, 2014
概括
研究人员发现了FeBi2Se4,一种新的n型铁磁半导体 (n-FMS),具有高导电性和450 K的基里温度 (Tc).这一突破推动了半导体自旋电子学和基于自旋的设备.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 半导体物理 半导体物理
背景情况:
- 具有高基里温度 (Tc > 300 K) 的高性能n型铁磁半导体 (n-FMS) 对于推进半导体自旋电子学至关重要.
- 在传统半导体中实现高Tc n-FMS和p-FMS是具有挑战性的,因为合的磁性和半导体子网.
研究的目的:
- 调查低对称性半导体在实现高Tc n型铁磁的潜力.
- 探索磁性和半导体子网的脱,以改善自旋电子特性.
主要方法:
- 低对称性半导体FeBi2Se4.4的合成和结构特征.
- 磁传输测量以评估电导率,铁磁性和库里温度.
- 分析材料独特的晶体结构,包括脱的磁性和半导体框架.
主要成果:
- FeBi2Se4具有高基里温度 (Tc) 约为450K,明显高于室温.
- 该材料表现出高的n型电导率,与强大的铁磁性共存.
- 磁传输数据显示了负磁电阻,表明了自旋极化导电电子.
结论:
- 在FeBi2Se4中将磁性和半导体子网脱,可以实现高Tc n型铁磁.
- 这种方法为高Tc n和p型铁磁半导体提供了一条途径.
- 这些发现提供了关于旋转子材料中载体介导铁磁的机制的见解.
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