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Electrostatic Boundary Conditions01:16

Electrostatic Boundary Conditions

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Consider an external electric field propagating through a homogeneous medium. When the electric field crosses the surface boundary of the medium, it undergoes a discontinuity. The electric field can be resolved into normal and tangential components. The amount by which the field changes at any boundary is given by the difference between the field components above and below the surface boundary.
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Electric Field at the Surface of a Conductor01:26

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Consider a conductor in electrostatic equilibrium. The net electric field inside a conductor vanishes, and extra charges on the conductor reside on its outer surface, regardless of where they originate.
In the 19th century, Michael Faraday conducted the famous ice pail experiment to prove that the charges always reside on the surface of a conductor. The experimental set-up consists of a conducting uncharged container mounted on an insulating stand. The outer surface of the container is...
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Electric Field Inside a Conductor01:20

Electric Field Inside a Conductor

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When a conductor is placed in an external electric field, the free charges in the conductor redistribute and very quickly reach electrostatic equilibrium. The resulting charge distribution and its electric field have many interesting properties, which can be investigated with the help of Gauss's law.
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Electric Field of Two Equal and Opposite Charges01:30

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Atoms generally contain the same number of positively and negatively charged particles, protons, and electrons. Hence, they are electrically neutral. However, the centers of the positive and negative charges do not always coincide. In such a scenario, the electric field of an atom may not be zero.
A separation of the positive and negative charges can lead to a weak, remnant effect of the positive and negative charges. The expectation is that the more the distance between the positive and...
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Electric Field Lines01:25

Electric Field Lines

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The three-dimensional representation of the electric field of a positive point charge requires tracing the electric field vectors, whose lengths decrease as the square of their distance from the charge and which point away from the charge at each point. This vector field is no doubt challenging to visualize. The visualization of electric fields becomes quickly intractable as the number of charges increases.
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Induced Electric Fields01:23

Induced Electric Fields

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The fact that emfs are induced in circuits implies that work is being done on the conduction electrons in the wires. What can possibly be the source of this work? We know that it’s neither a battery nor a magnetic field, as a battery does not have to be present in a circuit where current is induced, and magnetic fields never do any work on moving charges. The source of the work is in fact an electric field that is induced in the wires. For example, if a stationary conductor is placed in a...
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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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在单分子连接处的电场分解.

Haixing Li1, Timothy A Su1, Vivian Zhang1

  • 1†Department of Applied Physics and Applied Mathematics and ‡Department of Chemistry, Columbia University, New York, New York 10027, United States.

Journal of the American Chemical Society
|February 13, 2015
PubMed
概括
此摘要是机器生成的。

这项研究揭示了电压偏差如何影响分子连接的稳定性. 共价键是强大的,而捐赠-接受键和Si-Si/Ge-Ge键在电压下破裂,Si-C骨干显示最稳定.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 纳米技术 纳米技术
  • 表面化学 表面化学

背景情况:

  • 了解分子连接的稳定性对于分子电子学至关重要.
  • 高压偏差可以诱导分子连接处的破裂.
  • 分子骨干和链接组在结位稳定性中的作用需要进一步研究.

研究的目的:

  • 在单分子/单键水平上研究分子结合在高电压偏差下的稳定性和破裂.
  • 确定分子骨干组成 (碳,,) 和链接组如何影响电压诱导的连接断裂.
  • 建立一种新的方法来研究单个分子规模的电场分解现象.

主要方法:

  • 使用基于扫描道显微镜的断裂连接技术.
  • 合成的基于碳,和的分子电线,带有有氧性链接组.
  • 分析了交叉口断裂概率作为应用电压偏差的函数.

主要成果:

  • 具有共价硫-金 (S-Au) 键的连接处表现出高强度,并且没有偏差依赖的破裂.
  • 与捐助者-接受者债券的结合更频繁地破裂,并显示出强烈的偏见依赖.
  • - (Si-Si) 和- (Ge-Ge) 键的破裂概率显著增加,超过1V,在甲基乙醇终结的disilate和 digermanes中.
  • 与- (Si-Si) 和-氧 (Si-O) 键相比,-碳 (Si-C) 脊柱在高电压下表现出更高的稳定性.

结论:

  • 在高电压下分子结的稳定性高度依赖于化学键和分子骨干的类型.
  • 共价S-Au键提供了优越的稳定性,而捐赠-接受和同核键 (Si-Si,Ge-Ge) 则容易受到电压诱导的断裂.
  • Si-C 键在高电场下的分子连接处提供了增强的稳定性,为强大的分子电子设备提供了潜力.