在双层石墨烯域壁的拓谷运输
Long Ju1, Zhiwen Shi1, Nityan Nair1
1Department of Physics, University of California, Berkeley, California 94720, USA.
Nature
|April 23, 2015
概括
研究人员在双层石墨烯域壁上观察到弹道导电通道. 这些一维的,谷极化状态在拓上受到保护,为探索量子谷霍尔效应提供了新的途径.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 拓学材料 拓学材料
背景情况:
- 双叶石墨烯在电场下呈现可调节的带隙,可能容纳拓绝缘相.
- 量子谷的霍尔效应和奇拉边缘状态预测在间隙双层石墨烯中.
- 石墨烯边缘的原子缺陷导致谷间散射,阻碍了奇拉边缘状态的观察.
研究的目的:
- 在双层石墨烯中实验观察受保护的性边缘状态.
- 为了研究两层石墨烯域壁上的导通道的特性.
- 在石墨烯中探索新的拓阶段和山谷物理.
主要方法:
- 利用近场红外纳米镜来成像双层石墨烯层叠叠的域壁.
- 制造的双门场效应晶体管以这些域墙为中心.
- 描述了域壁通道的电传输特性.
主要成果:
- 在双层石墨烯域壁上观察到弹道,一维的导电通道.
- 这些通道是山谷极化,在4K的400nm以上呈现弹道运输.
- 域壁为拓上受保护的奇拉状态提供了一个平台,与间隙单域双层石墨烯不同.
结论:
- 双叶石墨烯域墙壁托管着拓保护的,一维的山谷极化导电通道.
- 这些发现证明了观察量子谷霍尔效应的可行方法.
- 为先进的拓材料和山谷电子应用开辟了新的可能性.
相关概念视频
Reynolds Transport Theorem
2.1K
The Reynolds transport theorem provides a framework to relate the time rate of change of an extensive property within a system to that in a control volume, which is crucial for analyzing fluid dynamics. Extensive properties, such as mass, velocity, acceleration, temperature, and momentum, can be expressed in terms of the mass of a fluid portion. These properties are called extensive because they depend on the system's size, while intensive properties are their corresponding values per unit...
2.1K
Electrostatic Boundary Conditions in Dielectrics
2.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
2.1K
Membrane Asymmetry Regulating Transporters
8.0K
Enzymes like flippase, floppase, and scramblase transfer phospholipids from one layer to another in the membrane, thereby affecting membrane asymmetry.
Flippase
Eukaryotic flippases are type-IV P-type ATPases or P4-ATPases belonging to P-type ATPase family proteins that are membrane-bound pumps involved in the ATP-mediated transport of ions and molecules across the membrane. Flippases flip specific phospholipids from the outer to the inner leaflet of a membrane. All P4-ATPases have one...
Flippase
Eukaryotic flippases are type-IV P-type ATPases or P4-ATPases belonging to P-type ATPase family proteins that are membrane-bound pumps involved in the ATP-mediated transport of ions and molecules across the membrane. Flippases flip specific phospholipids from the outer to the inner leaflet of a membrane. All P4-ATPases have one...
8.0K
Pore Transport and Ion-Pair Transport
1.6K
Pore transport and ion-pair formation are critical mechanisms for the absorption and distribution of drugs in the body.
Pore transport, also known as convective transport, is a process where small molecules like urea, water, and sugars rapidly cross cell membranes as though there were channels or pores in the membrane. Although direct microscopic evidence is limited but the concept of pores or channels is widely accepted based on physiological evidence. Despite the lack of direct...
Pore transport, also known as convective transport, is a process where small molecules like urea, water, and sugars rapidly cross cell membranes as though there were channels or pores in the membrane. Although direct microscopic evidence is limited but the concept of pores or channels is widely accepted based on physiological evidence. Despite the lack of direct...
1.6K
Boundary Conditions for Current Density
1.4K
Current density becomes discontinuous across an interface of materials with different electrical conductivities. The normal component of the current density is continuous across the boundary.
1.4K
Carrier Transport
1.2K
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.2K


