在六角化上对ZrS2单层和几层的受控合成
Mei Zhang1, Yiming Zhu1,2, Xinsheng Wang1
1†CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
Journal of the American Chemical Society
|May 22, 2015
概括
研究人员合成了六角二硫化物 (ZrS2) 单层和少层. 这些材料显示出电子应用的潜力,因为它们的n型运输行为和载体移动性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 像ZrS2这样的IVB组过渡金属二甲基化物 (TMD) 与VIB组TMD相比具有潜在的优势.
- 更高的载波流动性和道电流密度是先进电子设备的关键特性.
研究的目的:
- 合成六角二硫化物 (ZrS2) 单层和几层薄膜.
- 描述合成ZrS2.2的结构和电子特性.
主要方法:
- 在六角化 (h-BN) 上使用ZrCl4和S前体进行化学蒸汽沉积.
- 传输电子显微镜 (TEM) 用于结构和堆叠角度分析.
- 场效应晶体管 (FET) 的制造用于评估电子运输.
主要成果:
- 在h-BN.上成功合成六角ZrS2域 (1-3μm).
- 通过调整ZrCl4蒸发温度来控制层厚度.
- 通过TEM观察到的ZrS2和h-BN之间的偏好接近0°堆叠角度.
- FETs展示了n型运输,其流动性为0.11.1cm2/V·s.
结论:
- 六边形ZrS2单层和少层可以在h-BN上以受控的厚度和方向合成.
- 合成的ZrS2显示出对电子应用的n型半导体有希望的特性.
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